The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1982
Filed:
Dec. 15, 1980
Applicant:
Inventors:
Mark G Rockley, Stillwater, OK (US);
Gilbert J Mains, Stillwater, OK (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427 541 ; 427 85 ; 427 86 ;
Abstract
A method of depositing a doped amorphous semiconductor on a base material including the steps of subjecting the base to an environment including a semiconductor gas such as silane or germane, a dopant gas such as arsine, phosphine, or diborane, and mercury vapor, and exposing the base in such environment to ultraviolet radiation to effect decomposition of the semiconductor and dopant materials onto the base.