The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1982
Filed:
Nov. 17, 1980
Akio Inohara, Osaka, JP;
Kiyoshi Sawae, Nara, JP;
Hisao Kawaguchi, Sakai, JP;
Takeo Fujimoto, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A sealing technique is disclosed by which the firing voltage of atmospheric discharge is increased by a pressurizing procedure such that the internal pressure of a sealing chamber is held at room temperature above half (0.5) of the atmospheric pressure even after the completion of sealing. Preferably, the pressurizing procedure is accomplished by a partial modification in the existing sealing facilities (for example, belt furnaces and low temperature furnaces). In another aspect of the invention, the method for sealing a semiconductor device minimizes water in the chamber after sealing by suppressing water expelled from glass frit during sealing or allowing the glass frit to absorb the water expelled therefrom. In other words, sealing is performed first under nitrogen gas atmosphere and then under oxygen gas atmosphere.