The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1982
Filed:
May. 09, 1980
Applicant:
Inventor:
Ernest A Carter, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
307264 ; 307475 ; 307578 ;
Abstract
An MOS voltage boost circuit includes a first field-effect-transistor coupled between ground and an output node and a second, depletion type, field effect transistor coupled between the output node and a source of supply voltage (V.sub.DD). The first transistor is turned off by a disabling signal, and the second transistor is turned on by an enabling signal derived, in part, from the disabling signal. This produces a first voltage at the output node. A third field-effect-transistor is capacitively coupled between the output node and the enabling signal to boost the output voltage when the enabling signal terminates.