The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1982
Filed:
Mar. 04, 1981
Applicant:
Inventors:
Hiroo Tochikubo, Tokyo, JP;
Akira Kanai, Hachiohji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 35 ; 427 431 ; 427 531 ; 4272551 ;
Abstract
Herein disclosed is a method of fabricating a thick single-crystalline silicon film at a low temperature less than 1000.degree. C. The method is characterized in that, simultaneously as silicon polycrystals are grown on a substrate to form polycrystalline silicon, said polycrystals are irradiated and annealed with a laser or electron beam so that said polycrystalline silicon is single-crystallized to fabricate a single-crystalline silicon film.
Tochikubo, Hiroo. (1982). Method of fabricating single-crystalline silicon films (U.S. Patent No. 4343829). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4343829
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile