The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1982
Filed:
Mar. 31, 1981
Charles F Gay, Tujunga, CA (US);
Atlantic Richfield Company, Los Angeles, CA (US);
Abstract
A method of forming semiconductor devices incorporates etching during the slicing of a semiconductor ingot from which semiconductor wafers are formed. In addition, a partial slicing through the ingot yields partially cut wafers which are maintained integral beyond a diffusion step. Grinding is then employed to remove unwanted material, to shape, and to accomplish the separation of the wafers. A doped, silicon ingot is used with a solution of sodium hydroxide or potassium hydroxide as the etchant. With the ingot in the [111] type of crystal orientation, the etching proceeds readily adjacent to the slicing cuts to facilitate the slicing, and proceeds slowly elsewhere to minimize material wastage. As a result, the formation of extremely thin wafers with minimal cutting loss is possible.