The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1982
Filed:
Dec. 24, 1980
Applicant:
Inventors:
John C Evans, Jr, Ravenna, OH (US);
An-Ti Chai, N. Ridgeville, OH (US);
Chandra P Goradia, Cleveland, OH (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136249 ; 357 30 ;
Abstract
A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body (12). The unit cells comprise a doped regions (20, 22) of opposite conductivity type separated by a gap or undiffused region (24). Metal contacts (26) connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions (14) separated by gap (16) overlie the unit cells but the cells may be formed in both faces of the wafer (FIG. 2).