The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 1982

Filed:

Feb. 02, 1981
Applicant:
Inventor:

Philip J Coane, Mahopac, NY (US);

Assignee:

Hughes Aircraft Company, Culver City, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
430 11 ; 430 12 ; 430 15 ; 430 16 ; 430 18 ; 430273 ; 430275 ; 430296 ; 430312 ; 430314 ;
Abstract

The specification describes a mask structure comprising a resist pattern having a controlled line profile, for use in defining a predetermined region on and above a substrate. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure to the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed. Finally, a second chosen solvent is applied for a second predetermined period of time to develop the pattern in the bottom layer of resist and to thereby form a T-shaped profile in the composite resist, which serves as the mask structure to define the desired region on and above the substrate.


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