The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1982
Filed:
Jun. 16, 1980
Applicant:
Inventors:
Arthur C Adams, Berkeley Heights, NJ (US);
Hyman J Levinstein, Berkeley Heights, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 85 ; 427 93 ; 4272554 ; 4272557 ; 427255 ; 4272481 ; 427300 ; 427350 ; 427377 ;
Abstract
The efficient production of sequential layers of silicon dioxide and polycrystalline silicon is possible using a specific set of reaction steps. This set of reaction steps includes the oxidation of silicon at low oxygen pressure and at temperatures of the magnitude of 900 degrees C., followed by the deposition of polycrystalline silicon at substantially the same temperature utilizing a dichloride silane chemical vapor deposition (CVD) process.