The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 1982

Filed:

Nov. 21, 1980
Applicant:
Inventor:

Henley F Sterling, Great Dunmow, GB;

Assignee:

ITT Industries, Inc., New York, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156601 ; 156603 ; 156613 ; 156D / ; 148175 ;
Abstract

Crystalline semiconductor material is produced in strip or sheet form by a gas process. The corresponding amorphous semiconductor is vapour deposited on to a substrate material which is subsequently removed from the amorphous semiconductor. The semiconductor is then selectively heated to induce crystallization. Devices may be fabricated on the crystalline material in tandem with the deposition and crystallization processes.


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