The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1982
Filed:
Feb. 01, 1980
Applicant:
Inventor:
Friedrich Hapke, Hamburg, DE;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324 / ; 307581 ;
Abstract
An MOS integrated circuit arrangement with field-effect transistors includes a circuit arrangement for rapidly testing various blocks of the circuit. This circuit arrangement includes three transistor-switch groups; a first group for testing an input block, a second group for connecting and disconnecting the input block and an output block so that the blocks may be tested in combination, and a third group for testing the output block. The disclosed circuit provides a single and yet effective testing arrangement.
Hapke, Friedrich. (1982). Mos integrated test circuit using field effect transistors (U.S. Patent No. 4339710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4339710
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile