The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1982
Filed:
Sep. 05, 1980
Applicant:
Inventors:
Marc M Faktor, Bushey Heath, GB;
John Haigh, Ipswich, GB;
Assignee:
The Post Office, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156605 ; 156D / ; 156D / ; 75 62 ;
Abstract
A Group III element Q selected from gallium, indium and thallium containing a Group VI element X selected from oxygen, sulphur, selenium and tellurium as an impurity can be purified by adding, to molten Q, an element M capable of forming with X a stable solid compound substantially insoluble in liquid Q. The stable solid compound can be separated and the purified Q used in the epitaxial growth of a semiconductor material such as indium phosphide. Alternatively, in a process for the epitaxial growth of a semiconductor compound of Q in molten Q, X can be removed in situ by the addition of a suitable element of the M-type.