The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1982
Filed:
Mar. 18, 1980
Josef H Schurmann, Oberhummel, DE;
Texas Instruments Deutschland GmbH, Freising, DE;
Abstract
A high frequency input signal is applied to one gate of a dual gate MES or MIS field effect transistor. A high gain control voltage is applied to the second gate. To reduce the steepness of the main control slope in the pinch-off voltage region of the transistor a diode combination is connected between the second gate and a node of the amplifier circuit which has a fixed potential lying within the gain control voltage range. The conductive threshold of the diode combination is selected such that the combination becomes conductive when the gate control voltage is sufficient to initiate pinch off of the field effect transistor. The diode combination suitably may comprise a forward conduction diode connected a series opposed polarity with a zener diode or, alternatively, may comprise a series chain of forward conduction diodes.