Overcoated photoreceptor containing inorganic electron trapping and hole

Abstract

This invention is generally directed to an inorganic overcoated photoresponsive device comprised of a substrate, a layer of electron trapping material, this layer being comprised of halogen doped selenium, halogen doped arsenic selenium alloys, and mixtures thereof; a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.1 percent, and the halogen is present in an amount of from 10 parts per million to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, said layer being comprised of alloys of selenium tellurium, or alloys of selenium, tellurium, and arsenic; a hole trapping layer overcoated on the generating layer, said layer being comprised of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight ranges from about 95 percent to about 99.9 percent, the amount of arsenic present ranges from about 0.1 percent to about 5 percent, and the amount of halogen present ranges from about 10 parts per million to about 200 parts per million; and a layer of insulating organic resin overlaying the hole trapping layer. This device is useful in an electrophotographic imaging system employing a double charging sequence, that is, negative charging followed by positive charging.