The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1982
Filed:
Dec. 22, 1980
Reimar Spohr, Darmstadt, DE;
Gesellschaft fur Schwerionenforschung GmbH, Darmstadt, DE;
Abstract
A method for producing planar surfaces having very fine peaks in the micron range or smaller, e.g. planar field emission cathodes, of conductive or semiconductive material, by filling cavities in a matrix. A sheet of the planar dielectric material is irradiated with high energy ions, e.g. from a heavy ion accelerator to form nuclear traces therein, and is subsequently subjected to an etching process to expose the nuclear traces. Thereafter, the hole-like nuclear traces or cavities are filled with conductive or semiconductive material and one surface of the sheet of planar material is covered, at the open ends of the nuclear traces or cavities, with a coating of likewise conductive or semiconductive material. If desired the matrix of planar material may subsequently be removed.