The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1982
Filed:
Feb. 01, 1980
Applicant:
Inventor:
Friedrich Hapke, Hamburg, DE;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R / ; G01R / ;
U.S. Cl.
CPC ...
3241 / ; 324 / ; 3241 / ;
Abstract
In order to improve yield, integrated circuits may advantageously be tested using internal test circuitry during fabrication to locate faults. In order to conduct the necessary tests without providing an extra external test connection, the invention contemplates using a required existing terminal of an integrated circuit along with a test circuit which is activated by a voltage outside the normal operating voltage range, such as a voltage of opposite polarity to that used during normal operation.
Hapke, Friedrich. (1982). Integrated circuit arrangement in mos-technology with field-effect (U.S. Patent No. 4336495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4336495
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile