The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1982
Filed:
Mar. 06, 1981
Wirojana Tantraporn, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
The single crystal growth of GaAs is highly anisotropic under certain conditions. A wafer of GaAs is masked and exposed to the vapor only through a long, narrow slot in the <110> direction. A thin ribbon of single crystal GaAs grows out of the slot at a high rate along the <112> vector and has {111} plane major faces and {110} plane edges. This ribbon is flexible. A H.sub.2 -AsCl.sub.3 -Ga epitaxy system is modified to permit retraction of the ribbon as it grows and thus the production of long ribbons.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile