The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1982
Filed:
Sep. 24, 1980
Applicant:
Inventor:
Steven N Lee, Irvine, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 148-15 ; 148187 ; 357 41 ; 357 91 ;
Abstract
A method of making complementary n-channel and p-channel metal oxide semiconductor (CMOS) device pairs in a common insulatively supported semiconductor layer, including simultaneously converting by exposure to an ion beam adjacently arranged complementary regions in different members of a device pair in said layer from a first to a second conductivity type.
Lee, Steven. (1982). Method of making cmos devices (U.S. Patent No. 4335504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4335504
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile