Non-destructive read out field effect transistor memory cell system

Abstract

A non-destructive read out memory cell system is provided having a semiconductor substrate supporting an array of memory cells each of which includes a field effect transistor having a source and a drain defining a channel region having high and low threshold sections. In a first embodiment the channel region is further defined by the upper surface of the semiconductor substrate, and in second and third embodiments the channel region is further defined by a V-groove and by a U-groove, respectively, formed in the substrate. A gate electrode separated from the surface of the semiconductor substrate by a thin insulating layer is disposed over the channel region. A storage node, preferably an N+ diffusion region, is located within the substrate adjacent to the high threshold section of the channel region. Pulsing means are provided for selectively charging and discharging the storage node and sensing means are provided to determine the flow of current passing through the channel region, which is representative of the binary information contained on the storage node.