The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1982
Filed:
Mar. 18, 1980
Otto H Schade, Jr, North Caldwell, NJ (US);
RCA Corporation, New York, NY (US);
Abstract
In addition to the usual field-effect transistor structures available in CMOS-type integrated circuitry, certain bipolar transistor structures are also available for use in linear amplifier circuits combining both bipolar and FET devices. One of the transistor structures available, i.e., a vertical transistor, has high current gain but its collector region, integral to the substrate, is committed to substrate potential. The other of the bipolar transistor structures available, i.e., a lateral transistor, has an uncommitted collector, but has low current gain. A cascade connection of both bipolar transistor types provides a composite transistor with high current gain and uncommitted collector useful in combination with field-effect transistor structures to form novel amplifier arrangements.