The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1982
Filed:
Apr. 14, 1980
Alfred Schmitt, Boeblingen, DE;
Gerd Schorer, Herrenberg, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates to a semiconductor device and to a method of fully eliminating lattice defects in N-conductive zones of a semiconductor device which are generated by ion implantation of phosphorus. According to the invention, conductivity-determining ions like antimony or arsenic are implanted into phosphorus-doped zones of a semi-conductor device. A dosage of 1 to 10% of the phosphorus dose is used. The implantation of the antimony or arsenic takes place with the same, or with a greater implantation depth than the phosphorus depth. Subsequent to the antimony/arsenic implantation the device is annealed in an inert gas atmosphere at approximately 1000.degree. C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile