The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1982
Filed:
May. 22, 1979
Isao Ota, Osaka, JP;
Haruhiro Shirazawa, Daito, JP;
Toshio Tatsumichi, Ando, JP;
Hiroshi Kawarada, Hirakata, JP;
Tetsuro Ohtsuka, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method of producing thin film transistor arrays and having at least 7 steps including: a first step of forming a first electrode layer uniformly over an insulating substrate; a second step of forming electrodes, such as drain and source electrodes and bus bars with a desired pattern by photoetching the first electrode; a third step of forming a uniform semiconducting layer on the surface of the substrate having the patterned electrodes; a fourth step of successively forming a uniform insulating layer over the uniformly deposited semiconducting layer while keeping the array in a vacuum; a fifth step of photoetching the uniformly deposited insulating layer into a desired pattern; a sixth step of photoetching the uniform semiconducting layer into the same pattern as the patterned insulating layer; a seventh step of forming a second electrode uniformly over the surface having the patterned electrodes and insulating layer; and an eighth step of photoetching the uniformly deposited second electrode into a desired pattern.