The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1982
Filed:
Dec. 11, 1980
Applicant:
Inventors:
Jun-ichi Nishizawa, Sendai, JP;
Ikuo Shiota, Sendai, JP;
Assignee:
Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ; H01L / ;
U.S. Cl.
CPC ...
428457 ; 148 333 ; 427 82 ; 427 88 ; 428689 ; 428697 ; 428698 ; 428702 ;
Abstract
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.