The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1982
Filed:
Jul. 21, 1980
Applicant:
Inventors:
Glenn D Kubiak, Palo Alto, CA (US);
Morton B Panish, Springfield, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 156D / ; 156D / ; 422245 ; 427 86 ; 118716 ; 118725 ;
Abstract
The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M.sub.2 or M.sub.4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As.sub.2 and P.sub.2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.