The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1982
Filed:
Nov. 28, 1980
Hiroshi Iwai, Takaidonishi, JP;
Yoshio Nishi, Yokohama, JP;
Abstract
A method of manufacturing semiconductor devices is disclosed which comprises the steps of: forming at least one groove at a given location of a semiconductor substrate; laying an insulating film over the entire surface of the semiconductor substrate including the groove; depositing conductive material on the insulating layer to a thickness greater than half the width of an opening of the groove; and forming a MOS capacitor electrode of the conductor layer left in the groove by etching the deposited conductor layer until the insulating film other than its portion within the groove is exposed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile