The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1982
Filed:
Jul. 17, 1980
Applicant:
Inventor:
Philip T Wu, Rochester, MN (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365104 ; 365168 ;
Abstract
Read-only storage chip stores three levels per single-FET cell by providing each cell with an enhancement gate, a depletion gate or no gate connection. Level decoders convert pairs of these three-level signals to triplets of two-level data signals for binary output from the ROS.
Wu, Philip. (1982). Read-only storage using enhancement-mode, depletion-mode or omitted gate (U.S. Patent No. 4327424). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4327424
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