The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1982
Filed:
Dec. 19, 1979
Applicant:
Inventors:
Henri Oguey, Corcelles, CH;
Bernard Gerber, Neuchatel, CH;
Assignee:
Centre Electronique Horloger S.A., Neuchatel, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
323313 ; 307304 ; 323316 ;
Abstract
A reference voltage source implemented in silicon-gate CMOS transistor technology comprises a pair of reference transistors of the same conductivity type, the gates of which are made of polycrystalline silicon and differ from each other by the type of doping. The reference voltage can be temperature-compensated by adding an auxiliary compensation voltage source or by establishing a predetermined ratio of current densities in the pair of reference transistors operating in weak inversion.