The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1982
Filed:
Aug. 25, 1980
Applicant:
Inventors:
Edward G Tefft, Auburn, NY (US);
Bernard R Tuft, Scipio Center, NY (US);
Assignee:
General Electric Company, Syracuse, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29583 ; 2957 / ; 2957 / ; 148-15 ; 148187 ; 156628 ; 156643 ; 156622 ;
Abstract
A method for forming low stress recesses in bodies of semiconductor material involves damaging the body either thermally or mechanically in the area where the recess is to be formed followed by etching in either a plasma or chemical medium to remove the damaged body portion leaving a relatively stress-free slot or other recess. Such recesses are utilized as diffusion sites for rapid formation of diffusion regions through semiconductor wafers and for the subdivision of wafers into discrete devices.