The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1982
Filed:
Jan. 30, 1980
Applicant:
Inventor:
Wolfgang Hoehn, Kirchzarten, DE;
Assignee:
ITT Industries, Inc., New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
3072 / ; 357 92 ; 3072 / ; 307477 ;
Abstract
The manufacturing, fluctuations in electrical parameters of I.sup.2 L double-collector current source transistors each of which is connected in series with a bias transistor having a base zone common with the base zone of the other bias transistors, are compensated by means of a bias voltage generator whose output voltage is fed to said common base. The bias voltage generator consists of a current mirror comprising a further I.sup.2 L double-collector current source transistor and a further bias transistor having the same configuration and conductivity type as the I.sup.2 L double-collector current source transistors and the bias transistors.