The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1982
Filed:
Jul. 29, 1980
Applicant:
Inventors:
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136255 ; 136258 ; 148-15 ; 357-2 ; 357 15 ; 357 30 ; 427 39 ; 427 74 ; 427 84 ; 427 86 ; 423349 ;
Abstract
Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.