The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1982
Filed:
Jan. 29, 1980
Applicant:
Inventors:
Michael D Rubin, Saratoga, CA (US);
Pang T Ho, Mountain View, CA (US);
Assignee:
Ford Aerospace & Communications Corp., Detroit, MI (US);
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330289 ; 330296 ;
Abstract
A field effect transistor bias circuit is presented which exhibits a low impedance for small signals and a high impedance for large signals. This circuit uses an operational amplifier to provide a temperature compensated low impedance voltage source for the gate bias which is optimal for small signal operation. In the presence of a large signal, the gate begins to draw current. This causes the operational amplifier to saturate and transforms the bias circuit into a high impedance source, which is optimal for large signal operation.