The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1982
Filed:
Jul. 07, 1980
Masanori Tanabe, Hitachi, JP;
Satoshi Shimada, Hitachi, JP;
Akio Yasukawa, Ibaraki, JP;
Hideyuki Nemoto, Katsuta, JP;
Motohisa Nishihara, Katsuta, JP;
Masatoshi Tsuchiya, Hitachi, JP;
Ko Soeno, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.