The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1982
Filed:
Jun. 28, 1979
Clarence A Lund, Mesa, AZ (US);
Edward W Barron, Mesa, AZ (US);
Howard E Holstin, Tempe, AZ (US);
Michael D Sugino, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A self-aligned MOS transistor having improved operating characteristics and higher packing density and a method for fabricating the device. Resistance of the gate electrode is reduced substantially by forming the electrode of a metal silicide. Resistance of the source and drain regions is likewise reduced substantially by forming a metal silicide in the doped junction region which allows those regions to be smaller and to require less area. The silicided source and drain regions are self-aligned with and closely spaced to the silicided gate electrode. This is provided by a process which utilizes and makes possible an undercut etching of a polycrystalline silicon gate electrode.