The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 1982

Filed:

May. 16, 1980
Applicant:
Inventor:

Ping K Tien, Chatham Township, Morris County, NJ (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 2191 / ; 2191 / ; 357 91 ; 427 531 ; 372 44 ;
Abstract

A stripe geometry is fabricated in a laser-diode structure having a plurality of epitaxial layers, including in tandem an undoped active semiconductor layer (3), a p-doped semiconductor layer (4), a moderately n-doped semiconductor layer (5) and a heavily p.sup.+ -doped layer (6) by focusing laser radiation on the n-doped semiconductor layer (5). The laser radiation is chosen to have a wavelength which passes through the p.sup.+ -doped layer (6) without absorption. When the laser radiation is absorbed in the n-doped layer, heat is generated which causes diffusion of p-dopant from the two adjacent layers to convert the exposed region to p-type. As the laser beam is scanned, a stripe having a forward pn junction for laser action is formed.


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