The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1982
Filed:
Jul. 24, 1979
Toshihumi Yoshikawa, Nara, JP;
Zempei Tani, Tondabayashi, JP;
Akira Aso, Nara, JP;
Hitoshi Kawanabe, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A photoelectric semiconductor device is disclosed which exhibits a reduced spectral sensitivity in a desired wavelength zone. An N(P) type impurity region is formed in a P(N) type semiconductor substrate to establish a first PN junction functioning as a first photodiode. A P(N) type impurity region is shallowly formed in the N(P) type impurity region to establish a second PN junction functioning as a second photodiode. When the first PN junction is shunted, the photoelectric semiconductor device shows a spectral sensitivity which is reduced in the longer wavelength zone. Contrarily, when the second PN junction is shunted, the photoelectric semiconductor device shows the spectral sensitivity which is reduced in the shorter wavelength zone.