The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1982
Filed:
May. 01, 1979
Applicant:
Inventors:
James S Thomas, Manor, TX (US);
Kim Eckert, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307362 ; 307450 ; 307581 ;
Abstract
An N-channel MOS high voltage detection circuit generates an output when an input voltage (Vin) exceeds a supply voltage (V.sub.DD) by a desired offset voltage. The crossover detection is delayed by pumping more current into an output producing node via a lower resistance field effect transistor having a gate coupled to the input voltage. The output is finally produced when the effect of this transistor is overcome by a second field effect transistor. Switching characteristics may be sharpened by placing a voltage limiting field effect transistor between Vin and the gate of the low resistance field effect transistor.