The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1982
Filed:
Jun. 18, 1980
Applicant:
Inventors:
Joannes J Koomen, Los Altos, CA (US);
Roelof H Salters, Eindhoven, NL;
Assignee:
Signetics Corporation, Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 29571 ; 2957 / ; 29578 ; 148-15 ; 357 23 ; 357 59 ; 357 91 ;
Abstract
A method of fabricating a double polysilicon MOS structure of reduced size employs local oxidation of polysilicon to define and isolate a first polysilicon layer. Prior to etching the first polysilicon layer, a first masking step defines one of the elements of the MOS transistor, such as the source. By selectively etching the first polysilicon layer, the isolation regions and then the other elements of the MOS transistor are defined. With only slight variations in the simplified process, either a plurality of one MOS transistor-one capacitor memory cells or a plurality of MOS transistors can be fabricated.