The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1982
Filed:
Nov. 28, 1979
Applicant:
Inventor:
Kenjiro Yasunari, Hinode, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 148-15 ; 148187 ; 357 23 ;
Abstract
This invention relates to a method of producing a semiconductor device, and more particularly to a method of leading out an electrode for a semiconductor substrate. A conductor layer of polycrystalline silicon or the like is formed on the surface of the semiconductor substrate on which the substrate electrode is to be formed, a desired semiconductor region having a conductivity type opposite to that of the substrate is selectively formed under this state, and the semiconductor substrate electrode is formed on the substrate surface after removing the conductor layer.