The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1982
Filed:
May. 08, 1979
Isao Yoshida, Hinodemachi, JP;
Minoru Nagata, Kodaira, JP;
Shikayuki Ochi, Akishima, JP;
Hisao Katto, Hinodemachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET being used as a drain terminal of the circuit. First and second resistors are connected in series between the source terminal and the drain terminal, and a biasing voltage supply is connected between the juncture of both the resistors and the gate of the second MOSFET. By virtue of these connections the 'on' resistance of the high-voltage circuit is improved due to the effect of the biasing voltage effect in bringing the second MOSFET into an 'on' condition.