The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1982
Filed:
Aug. 20, 1980
Joseph Taillet, Boulogne, FR;
Office Nationale d'Etudes et de Recherches Aerospatiales, Chatillon, FR;
Abstract
Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.