The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1982
Filed:
Aug. 05, 1980
John M Swab, Baldwinsville, NY (US);
General Electric Company, Syracuse, NY (US);
Abstract
Apparatus is provided for periodically reading image intensity information from M rows x N columns of charge storage sites in a CID array imager. The magnitudes of signal charges collected at the sites in response to incident radiation are sensed by measuring changes in potential on column lines connected to the respective columns of sites. These changes in potential are caused by sequentially applying specific potentials to row lines connected to the respective rows of sites to effect injection of the signal charges into the substrate of the array. The apparatus operates to minimize charge transfers within the array during readout and is thus capable of accurately determining the magnitude of signal charges in arrays fabricated from semiconductor materials having low charge transfer efficiencies. The apparatus includes means for eliminating the effects of thermal (KT/C) noise from output voltages representative of the signal charge magnitudes.