The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 1982

Filed:

Nov. 28, 1980
Applicant:
Inventor:

Douglas E Houston, Ballston Lake, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K / ; H01L / ;
U.S. Cl.
CPC ...
228188 ; 29590 ; 228193 ; 357 81 ;
Abstract

A method is provided for thermo-compression diffusion bonding respective structured copper strain buffers directly to each of the two major opposed surfaces of a substrateless semiconductor device wafer having a beveled outer edge surface. A selected portion of each strain buffer axially aligned with a like portion of the other strain buffer is diffusion bonded to the wafer while subjecting the wafer only to substantially compressive force so as to avoid wafer fracture. The lateral extent of each strain buffer is less than that of the respective wafer surface in contact therewith, allowing the beveled surface to be cleaned and passivated prior to attachment of the strain buffers to the wafer via diffusion bonding.


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