The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 1982

Filed:

Jun. 25, 1979
Applicant:
Inventors:

Alain Bert, Paris, FR;

Bernard Leclerc, Paris, FR;

Yves Archambault, Paris, FR;

Assignee:

Thomson-CSF, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 56 ; 333154 ; 333150 ; 357 14 ; 357 51 ; 357 55 ;
Abstract

That face of the non-epitaxied substrate of high resistivity which supports the junction 3 formed by the planar method is treated by a mesa attack in such a way that it is smaller than the opposite face 7. An insulating ring 4 covers the periphery of the junction and projects beyond the substrate. This ring has external dimensions smaller than those of the face 7 beyond which it projects. A metallic layer 6 ensuring an ohmic contact covers in particular the lateral walls of the diode created by the mesa attack except for those zones of these walls beyond which the insulating ring 4 projects. This metallization of the lateral walls acts as an electrode and connects the diodes generally formed on one and the same substrate to one another.


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