The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1982
Filed:
Nov. 07, 1979
Victor Company of Japan, Limited, Yokohama, JP;
Abstract
A hall effect element of the type having a semi-insulating substrate of a single crystal of a compound semiconductor such as GaAs and an either n-type or p-type conducting layer which is formed on a surface given by a (1 0 0) plane of the single crystal and selectively removed by etching together with a surface region of the substrate to provide a Hall-pattern. As the improvement, the direction of current inflow in the Hall-pattern is made to coincide with either the [1 1 0] direction or the [1 1 0] direction in the (1 0 0) plane, whereby the Hall element becomes very small in the magnitude of unbalanced voltage despite a relatively high Hall voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile