The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1982
Filed:
Dec. 22, 1980
Applicant:
Inventor:
James L Vorhaus, Newton, MA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 36 ; 357 46 ; 357 55 ; 357 23 ;
Abstract
A field effect transistor is provided wherein a semiconductor body has a central source region and a plurality of drain regions disposed about the periphery of the central source region. A gate region, common to at least a portion of the plurality of drain regions, is also formed in the body. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a central source electrode formed on the semiconductor body.
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Vorhaus, James. (1982). Field effect transistor (U.S. Patent No. 4315272). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4315272
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile