The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1982
Filed:
Dec. 22, 1980
Karl Knauer, Kirchseeon, DE;
Hans-Joerg Pfleiderer, Zorneding, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
The invention relates to an input stage for a charge transfer device (CTD) arrangement which contains a source zone in a semiconductor body, two input electrodes, and a transfer gate, wherein one input gate is connected to a fixed voltage, and the other input gate is supplied with an analog input signal. In input stages of this kind, it is endeavored to evaluate the input signal within the widest possible limits without the need of altering the assigned semiconductor surface. The invention achieves this aim in that the input stage is divided into two input channels which possess different widths and which open into the CTD channel. A positive evaluation of the input signal is carried out via the first input channel, whereas a negative evaluation is carried out via the second input channel. The difference in area between the second input gate electrodes of the two input channels represents a gauge of the evaluation coefficient and can be kept very small. The range of application of the invention covers arbitrary CTD circuits, and in particular CTD transversal filters.