The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 1982

Filed:

Jun. 11, 1980
Applicant:
Inventors:

Hideaki Yamamoto, Hachioji, JP;

Akio Taniguchi, Hino, JP;

Shinkichi Horigome, Tachikawa, JP;

Susumu Saito, Hachioji, JP;

Yoshiaki Mori, Tokyo, JP;

Eiichi Maruyama, Kadaira, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03G / ; G03G / ;
U.S. Cl.
CPC ...
430 57 ; 430 85 ; 430 64 ; 430 79 ; 430 95 ;
Abstract

Disclosed is an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10% by weight of As, a second Se layer containing 40 to 47% by weight of Te and 3 to 10% by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10% by weight of As or an organic semiconductor layer, wherein a substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of said first Se layer and said fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive. It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50.degree. to 80.degree. C. The residual potential of the electrophotographic plate can be reduced.


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