The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1982
Filed:
May. 21, 1979
Applicant:
Inventors:
Charles F Krumm, Thousand Oaks, CA (US);
Robert A Pucel, Needham, MA (US);
Assignee:
Raytheon Company, Lexington, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 23 ; 357 36 ; 357 41 ; 357 55 ; 357 61 ;
Abstract
A field effect transistor is provided wherein a semiconductor body has a source region and a plurality of drain regions with a gate region common to the plurality of drain regions. A common gate electrode is formed over the common gate region to control the flow of carriers to each one of the plurality of drain regions. With such arrangement an efficient multi-drain field effect transistor is provided through the use of a common gate electrode formed on the semiconductor body.