The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 1982
Filed:
Oct. 01, 1979
Erich Kasper, Senden, DE;
Suso Weber, Langenau, DE;
Licentia Patent-Verwaltungs GmbH, Frankfurt am Main, DE;
Abstract
A semiconductor-glass composite material comprises at least one semiconductor bonded to a glass substrate, with the semiconductor layer having a strain .epsilon..ltoreq.0.3 per mil, and a dislocation density N.sub.V .ltoreq.2.times.10.sup.6 cm.sup.-2. In a process for producing the semiconductor-glass composite material, the semiconductor and glass are heated to a bonding temperature, bonded under pressure, and tempered at a temperature T.sub.a such that the viscosity of the glass at T.sub.a is 10.sup.12 to 10.sup.13.5 poise, and the following relationship holds: ##EQU1## wherein .alpha..sub.G and .alpha..sub.S are the coefficients of expansion of the glass and semiconductor, respectively, and T is temperature. The composite material is then cooled to room temperature.