The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1982
Filed:
Sep. 24, 1979
Robert L Seliger, Agoura, CA (US);
Hughes Aircraft Company, Culver City, CA (US);
Abstract
A high-resolution high-throughput ion beam lithography process and apparatus for exposing a large area target by a step-and-repeat process which accommodates lateral wafer distortions in the target and optimizes the resolution, throughput, yield, and cost of the process. First there is provided: a target having predetermined segments defined thereon, with the area of each segment being chosen to optimize the resolution, throughput, yield, and cost of the process; a mask placed in proximity to said target, to define the patterned ion beam; a collimated ion beam with a diameter approximately equal to the diameter of the mask, which is projected through the mask to form the patterned ion beam; and a means for aligning the mask and a selected segment of the target. The size of the mask is equal to or larger than the size of one of the predetermined segments of the target and the pattern area of the mask is smaller than the area of one of the selected segments of the target. Next, the mask is aligned with a first selected segment of the target and this first segment is exposed to the patterned ion beam, formed by projecting the collimated ion beam through the mask. Then, the mask is aligned with a second selected segment of the target and this second segment is exposed to the patterned ion beam. Thus, selected segments of the target are exposed to the projected ion beam pattern in a step-and-repeat manner.