The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1982
Filed:
Jul. 23, 1979
Ian M Baker, Southampton, GB;
Richard B Withers, Romsey, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A group of infra-red radiation detector elements are manufactured from a body (21) of infra-red sensitive materials on an insulating substrate (22) using two masking steps which do not require critical alignment even with close spacing between the elements. A first masking layer (24; see FIG. 10) e.g. of photoresist is formed on the upper surface of at least the body (21) to determine by a lift-off technique a metallization pattern (35, 36; see FIG. 13) on the body (21) and the substrate (22). A second masking layer (44) e.g. of photoresist is then provided to determine by ion-bombardment through windows (45) of this layer (44) the desired pattern of elements and their electrodes. The ion-bombardment permits removal of exposed areas of not just the body (21) and metallization pattern (35, 36) but also of a passivating layer on the body surfaces; a closely spaced group of elements and their electrodes can be obtained because the ion-bombardment results in steep sides without significant undercutting.